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Irini Michelakaki was born in 1981. She received her Applied Physics diploma from the School of Applied Mathematics and Physics of the National Technical University of Athens in 2005 and her MSc in Microelectronics and Optoelectronics from the University of Crete in 2009. From 2006 to 2011 she worked in various research projects in the Institute of Electronic Structure and Laser of the Foundation for Research and Technology (FORTH) and the Institute of Mictroelectronics of the National Centre for Scientific Research (NCSR) “Demokritos”. As of 2011, she is with the Deparment of Physics, NTUA as a PhD student.
- "Influence of oxygen content of room temperature TiO2-x deposited films for enhanced resistive switching memory performance", Journal of Applied Physics vol. 115(3), 2014, doi:10.1063/1.4862797 ,
- "Porous anodic alumina on galvanically grown PtSi layer for application in template-assisted Si nanowire growth", Nanoscale Research Letters vol. 6(414), 2011, doi:10.1186/1556-276X-6-414 ,