We investigate the physics and technology of resistive memories (ReRAM) based on metal oxides formed either from continuous thin films or nanoparticle assemblies. The material and device fabrication is performed in a high vacuum system in the Clean Room Laboratory of the Dept. of Physics of NTUA. We perform electrical characterization of the device as well as material characterization.
We collaborate with Asis. Prof. Leonidas Tsetseris for DFT calculations and the Department of Microelectronics/NCSR Demokritos for device scaling (Dr. P. Normand group) and Electron Microscopy (Dr. A. Travlos group)
Nanoparticle based sensors
We investigate the physics related to the electron transport in metallic nanoparticle assemblies and their use as sensors for physical or bio-chemical parameters. Material and device fabrication is performed in the Clean Room Laboratory of the Dept. of Physics of NTUA.
We collaborate with the Department of Microelectronics/NCSR Demokritos (Dr. S. Chatzandroulis group).
Thermal processing of Semiconductors
We investigate thermal processes including ultra fast thermal processing of semiconductors that can result in diffusionless dopant atom processing with high electrical activation. Main application is currently the investigation of damage annealing, dopant diffusion and activation following ion impantation in silicon and germanium.
For that purpose we collaborate with the Laser laboratory of the Dept. of Physics of NTUA and the Laser Thermal lab of the Univesrity of Berkeley (Prof. C. Grigoropoulos).