Panagiotis Bousoulas

Information

Bio

Bousoulas Panagiotis received the B.Sc. and M.Sc. degrees in Applied Physics and Microsystems and Nanotechnology, both from the National Technical University of Athens (NTUA), in 2010 and 2012, respectively. In 2016 he received his PhD from Department of Physics, NTUA for his work on resistive memories and applications.

Presently he is a post-doctoral researcher at the Department of Physics, NTUA as a member of the “National Infrastructure for Nanontechnology, Advanced Materials and Micro-Nano Electronics” project funded by the Operational Programme “Competitiveness, Entrepreneurship and Innovation” (EPANEK - NSRF 2014-2020).

Scientific interests

His current research interests include the characterization and modeling of electrical and physical properties in resistive switching and flash memories. He is also interested in the influence of radiation on non-volatile memory cells as well as the usage of nanoparticles in novel devices.

Selected publications

• P. Bousoulas, I. Karageorgiou, V. Aslanidis, K Giannakopoulos and D. Tsoukalas , "Tuning Resistive, Capacitive, and Synaptic Properties of Forming Free TiO2‐x‐Based RRAM Devices by Embedded Pt and Ta Nanocrystals ", physica status solidi (a) vol. 215(3), pp.1700440, 2018, doi:10.1002/pssa.201700440
• I. Michelakaki, P. Bousoulas, P., S. Stathopoulos, N. Boukos, D. Tsoukalas , "Coexistence of bipolar and threshold resistive switching in TiO2 based structure with embedded hafnium nanoparticless ", Journal of Physics D: Applied Physics vol. 50(4), pp.045103, 2017, doi:10.1088/1361-6463/aa5161
• P. Bousoulas, I. Giannopoulos, P. Asenov, I. Karageorgiou and D. Tsoukalas , "Investigating the origins of high multilevel resistive switching in forming free Ti/TiO2−x-based memory devices through experiments and simulations ", Journal of Applied Physics vol. 121, pp.094501, 2017, doi:10.1063/1.4977063
• P. Bousoulas, I. Michelakaki, E. Skotadis, M. Tsigkourakos and D. Tsoukalas , "Low-Power Forming Free TiO2-x/HfO2-y/TiO2-x-Trilayer RRAM Devices Exhibiting Synaptic Property Characteristics ", IEEE Transactions on Electron Devices vol. 64(8), pp.3151-3158, 2017, doi:10.1109/TED.2017.2709338
• M. Tsigkourakos, P. Bousoulas, V. Aslanidis, E. Skotadis and D. Tsoukalas , "Ultra‐Low Power Multilevel Switching with Enhanced Uniformity in Forming Free TiO2− x‐Based RRAM with Embedded Pt Nanocrystals ", physica status solidi (a) vol. 214(12), pp.1700570, 2017, doi:10.1002/pssa.201700570
• P. Bousoulas, I. Karageorgiou, V. Aslanidis, K Giannakopoulos and D. Tsoukalas , "Tuning Resistive, Capacitive, and Synaptic Properties of Forming Free TiO2‐x‐Based RRAM Devices by Embedded Pt and Ta Nanocrystals ", physica status solidi (a) vol. 215(3), pp.1700440, 2018, doi:10.1002/pssa.201700440